HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS

HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS

文件：164.16 Kbytes 页数：2 Pages

TOSHIBA

东芝

RF POWER MOS FET

DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES • High power gain:Gpe³13dB @Vdd=9.6V,f=450MHz,Pin=17dBm • High efficiency:55 typ. • Source case type SOT-89 package(connected internally to source)

文件：37.56 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

RF POWER MOS FET(VHF/UHF power amplifiers)

DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES • High power gain:Gpe³8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm • High efficiency:55 typ. • Source case type seramic package (connected internally to source) APPLICATION F

文件：29.25 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

RF POWER MOS FET(VHF/UHF power amplifiers)

DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES • High power gain:Gpe³8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm • High efficiency:55 typ. • Source case type seramic package (connected internally to source) APPLICATIO

文件：29.5 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

DC-DC Converter Applications

DC-DC Converter Applications Features • Low ON resistance. • 4V drive.

文件：108.68 Kbytes 页数：4 Pages

SANYO

三洋

DC/DC Converter Applications

DC/DC Converter Applications Features • Low ON resistance. • 4V drive.

文件：42.26 Kbytes 页数：4 Pages

SANYO

三洋

DC/DC Converter Applications

DC/DC Converter Applications Features • Low ON resistance. • 4V drive.

文件：42.26 Kbytes 页数：4 Pages

SANYO

三洋

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：45.94 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：77.76 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：77.76 Kbytes 页数：7 Pages

RENESAS

瑞萨