N-Channel 60 V (D-S) MOSFET

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source

文件：53.81 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source

文件：95.57 Kbytes 页数：9 Pages

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N-Channel 60 V (D-S) MOSFET

文件：1.00194 Mbytes 页数：8 Pages

VBSEMI

微碧半导体