FIELD-EFFECT TRANSISTOR

DESCRIPTION 2SK2880 is a small type resin sealed N channel junction type FET. It is especially designed for low frequency low noise amplify application. APPLICATION Low frequency voltage amplify, analog switch.

文件：103.63 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

SILICON N-CHANNEL MOS TYPE

Chopper Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.08 Ω (typ.) • High forward transfer admittance: |Yfs| = 17 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) • Enhancement mode: Vth = 0.

文件：292.83 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND APPLICATIONS)

Chopper Regulator, DC−DC Converter Applications ● Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) ● High forward transfer admittance : |Yfs| = 3.8 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：295.48 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching

文件：38.64 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching

文件：38.64 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching

文件：38.64 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS(ON)= 14 mΩ(typ.) High forward transfer admittance : |Yfs| = 31 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 50 V) Enhancement mode : Vth= 0.8 to 2.0 V (VDS= 10 V, I

文件：290.22 Kbytes 页数：5 Pages

TOSHIBA

东芝