MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p

文件：74.61 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

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无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p

文件：74.61 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0

文件：247.07 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0

文件：247.07 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0

文件：247.07 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p

文件：74.61 Kbytes 页数：8 Pages

NEC

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThis product is N-Channel MOS Field Effect Transistor designed for high current switching applications.\n\nFEATURES\n• Super Low On-State Resistance\n  RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A)\n  RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A)\n• Low Ciss: Ciss= 7200 pF (TYP.)\n• Buil • Super Low On-State Resistance\n  RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A)\n  RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A)\n• Low Ciss: Ciss= 7200 pF (TYP.)\n• Built-in Gate Protection Diode;

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