Silicon N Channel DV-L MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching

文件：51.01 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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isc N-Channel MOSFET Transistor

文件：300.03 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：90.19 Kbytes 页数：8 Pages

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Transistors>Switching/MOSFETs

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