| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier 文件：366.84 Kbytes 页数：2 Pages | FUJI 富士通 | FUJI | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：319.51 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier 文件：366.84 Kbytes 页数：2 Pages | FUJI 富士通 | FUJI | ||
N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplif 文件：322.86 Kbytes 页数：2 Pages | FUJI 富士通 | FUJI | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.68 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplif 文件：322.86 Kbytes 页数：2 Pages | FUJI 富士通 | FUJI | ||
N-channel MOS-FET Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated 文件：367 Kbytes 页数：2 Pages | FUJI 富士通 | FUJI | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：319.75 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
N-channel MOS-FET Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated 文件：367 Kbytes 页数：2 Pages | FUJI 富士通 | FUJI | ||
N-channel MOS-FET Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated 文件：367 Kbytes 页数：2 Pages | FUJI 富士通 | FUJI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
90000 |
询价 | ||||
FUJI |
17+ |
TO-220F |
6200 |
询价 | |||
FUJ/富士 |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
询价 | ||
FUJI原装 |
25+23+ |
TO-220F |
23970 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FUJI/富士电机 |
2022+ |
458 |
全新原装 货期两周 |
询价 | |||
FUJI原装 |
24+ |
TO-220F |
30980 |
原装现货/放心购买 |
询价 | ||
FUJITSU/富士通 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FUJITSU/富士通 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
FUJI |
15+ |
TO-220F |
493 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FUJ |
23+24 |
TO-220F |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
询价 |
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