Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Application High speed power switching

文件：28.32 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter. Application High speed power switching

文件：80.71 Kbytes 页数：7 Pages

RENESAS

瑞萨

Fast Switching Speed

文件：60.12 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

•  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  No Secondary Breakdown\n•  Suitable for Switching regulator, DC-DC converter.Application\nHigh speed power switching\n ;

HITACHI

日立

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter. Application High speed power switching

文件：80.71 Kbytes 页数：7 Pages

RENESAS

瑞萨