N-channel MOS-FET

600V 0,75W 12A 80W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Po

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Fuji

富士通

N-channel MOS-FET

600V 0,75W 12A 80W - High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS= ± 30V Guarantee\n- Avalanche ProofApplications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control,UPS ·DC-DC converters ·General purpose power amplifier

文件：305.05 Kbytes 页数：2 Pages

ISC

无锡固电

Fast Switching Speed

文件：72.24 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOS-FET

600V 0,75W 12A 80W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose

文件：197 Kbytes 页数：2 Pages

Fuji

富士通