MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2137 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2137: RDS(on) = 2.4 Ω (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2137 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2137: RDS(on) = 2.4 W (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 550 pF TYP. • High Aval

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RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08673 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：323.34 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

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