Silicon N-Channel Power F-MOS FET

Features 1. Avalanche energy capacity guaranteed: EAS > 15mJ 2. VGSS= ±20V guaranteed 3. High-speed switching: tf = 35ns 4. No secondary breakdown Applications 1. Contactless relay 2. Diving circuit for a solenoid 3. Driving circuit for a motor 4. Control equipment

文件：45.87 Kbytes 页数：3 Pages

PANASONIC

松下

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.58 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：323.76 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel Power F-MOS FET

Panasonic

松下