Silicon N Channel MOS FET

HITACHI

日立

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter Application High speed power switching

文件：47.81 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

文件：398.13 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：308.96 Kbytes 页数：2 Pages

ISC

无锡固电