Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator • Low drive current Application High speed power switching

文件：82.37 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance\n• No secondary breakdown\n• Low drive currentApplication\n   High speed power switching;

Renesas

瑞萨

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=12A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Fast Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Suitable for switching regulator

文件：279.09 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator • Low drive current Application High speed power switching

文件：82.37 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator • Low drive current Application High speed power switching

文件：47.82 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

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