HF Amplifiers Low-Frequency Amplifiers Analog Switches

HF Amplifiers Low-Frequency Amplifiers Analog Switches Features • Adoption of FBET process. • Large |yfs|. • Small Ciss • Small-sized package permitting 2SK1740-applied sets to be made small and slim.

文件：43.34 Kbytes 页数：5 Pages

SANYO

三洋

2SK1741

For ultra high speed switching Features ・ Low on resistance, ultra high speed switching, converter.

文件：392.49 Kbytes 页数：3 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.97 Kbytes 页数：2 Pages

ISC

无锡固电

2SK1745

2SK1745

文件：60.84 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Fast Switching Speed

DESCRIPTION • Drain Current ID=18A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • Fast Switching Speed APPLICATIONS • Power supplies, converters and power motor controls

文件：68.06 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：TO-220FL；HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

Features - Low Drain-Source ON Resistance : RDS (ON) = 3.0 (Typ.) - High Forward Transfer Admittance : [Yfs=1.5S (Typ.) - Low Leakage Current IDSS=300μA (Max.) @VDS-600V - Enhancement-Mode : Vth=2.0-4.0V @VDS=10V, ID=1mA

文件：668.81 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：504.14 Kbytes 页数：11 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：319.15 Kbytes 页数：9 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：309.44 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.79 Kbytes 页数：2 Pages

ISC

无锡固电