Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：81.9 Kbytes 页数：7 Pages

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瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7.0A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.75 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.0A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.33 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

文件：33.6 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

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Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

文件：82.34 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

文件：82.34 Kbytes 页数：7 Pages

RENESAS

瑞萨

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：571.02 Kbytes 页数：11 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.45 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：571.02 Kbytes 页数：11 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.7Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.38 Kbytes 页数：2 Pages

ISC

无锡固电