2SJ668.资料datasheet下载库存现货VBSEMI-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
2SJ668.	文件：976.21 Kbytes Page：7 Pages	P-Channel 4 0 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
2SJ668	文件：988.3 Kbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
2SJ668	文件：1.58274 Mbytes Page：73 Pages	BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
2SJ668	文件：195.23 Kbytes Page：6 Pages	RelayDrive,DC/DCConverterandMotorDrive	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
2SJ668	文件：204.69 Kbytes Page：6 Pages	SiliconP-ChannelMOSTypeRelayDrive,DC/DCConverterandMotorDriveApplications RelayDrive,DC/DCConverterandMotorDrive Applications •4Vgatedrive •Lowdrain-sourceON-resistance:RDS(ON)=0.12Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=5.0S(typ.) •Lowleakagecurrent:IDSS=−100μA(max)(VDS=−60V) •Enhancementmode:Vth=−0.	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA

更多2SJ668.供应商更新时间2025-5-28 11:08:00