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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
2SJ449	文件：217.79 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ449isP-ChannelMOSFieldEffectTransistordesigned forhighvoltageswitchingapplications. FEATURES LowOn-Resistance RDS(on)=0.8WMAX.(@VGS=–10V,ID=–3.0A) LowCissCiss=1040pFTYP. HighAvalanche	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ449	文件：120.71 Kbytes Page：8 Pages	SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SJ449isP-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. FEATURES •LowOn-Resistance RDS(on)=0.8ΩMAX.(@VGS=–10V,ID=–3.0A) •LowCissCiss=1040pFTYP. •HighAvalancheCapabilityRatings •IsolatedTO-2	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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2SJ449

文件：217.79 Kbytes

Page：10 Pages

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ449isP-ChannelMOSFieldEffectTransistordesigned forhighvoltageswitchingapplications. FEATURES LowOn-Resistance RDS(on)=0.8WMAX.(@VGS=–10V,ID=–3.0A) LowCissCiss=1040pFTYP. HighAvalanche

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

2SJ449

文件：120.71 Kbytes

Page：8 Pages

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ449isP-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. FEATURES •LowOn-Resistance RDS(on)=0.8ΩMAX.(@VGS=–10V,ID=–3.0A) •LowCissCiss=1040pFTYP. •HighAvalancheCapabilityRatings •IsolatedTO-2

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

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