2SJ386TZ-E规格书应用电路供应代理瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ386TZ-E	文件：71.69 Kbytes Page：6 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter 文件：71.69 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
2SJ386	文件：71.69 Kbytes Page：6 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter 文件：71.69 Kbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS
2SJ386	文件：38.07 Kbytes Page：7 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching 文件：38.07 Kbytes 页数：7 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ605-Z-E1	文件：0 bytes Page：0 Pages	TO263	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SJ652-1E	文件：0 bytes Page：0 Pages	TO-220-3	ON 上传：深圳市芯峰微电子科技有限公司	ON

更多2SJ386TZ供应商更新时间2025-11-25 16:30:00