NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR H-DEFLECTION OUTPUT

NPN Triple Diffused Mesa Type Silicon Transistor For H-Deflection Output (With Damper Diode)

文件：46.54 Kbytes 页数：1 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 10V(Max.)@ IC= 2.5A • Built-in Damper Diode APPLICATIONS • Designed for horizontal deflection output applications.

文件：211.2 Kbytes 页数：2 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR H-DEFLECTION OUTPUT

ONSEMI

安森美半导体

T0-92

TOSHIBA/东芝

上传：深圳广友电子有限公司

TO-92

TOSHIBA/东芝

上传：深圳广友电子有限公司