| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) • High DC Current Gain- : hFE= 500(Min.)@ IC= 5A APPLICATIONS • High voltage and high power switching applications. • Motor driver applications. 文件：226.72 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: -High DC Current Gain : hyg-1500 (Min.) (VCE-2V, Ic=2A) 文件：378.73 Kbytes 页数：4 Pages | TOSHIBA 东芝 | TOSHIBA | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 300V(Min) ·High DC Current Gain-: hFE= 1500(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage-: VCE(sat)= 2.0V(Max) @IC= 4A APPLICATIONS ·Igniter applications. ·High voltage switching applications. 文件：299.82 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: -High DC Current Gain : hyg-1500 (Min.) (VCE-2V, Ic=2A) 文件：378.73 Kbytes 页数：4 Pages | TOSHIBA 东芝 | TOSHIBA | ||
IGNITER APPLICATIONS. HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. FEATURES : -High DC Current Gain :hep-400 (Min.) (VCE=2V, IC-4A) -High Reverse Energy Es/B-245mJ (Min.) -Monolithic Construction With Built-In Base-Emitter Shunt Resistor. 文件：228.63 Kbytes 页数：3 Pages | TOSHIBA 东芝 | TOSHIBA | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB676 ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications 文件：129.82 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB676 ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications 文件：98.31 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications 文件：141.27 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications 文件：97.46 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
SILICON NPN EPITAXIAL (PCT PROCESS) TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL (PCT PROCESS) (DARLINGTON POWER) ○ Low Frequency Medium Power Amplifier and Medium Speed Switching Applications. ○ Pulse Motor Drive, Relay Drive and Hammer Drive Applications 文件：78.98 Kbytes 页数：1 Pages | TOSHIBA 东芝 | TOSHIBA |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl
- 性质：
低频或音频放大 （LF）_开关管 （S）
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
1.5A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD681,BSS52,2SC1879,2SD406,
- 最大耗散功率：
8W
- 放大倍数：
β>2000
- 图片代号：
C-62
- vtest：
100
- htest：
999900
- atest：
1.5
- wtest：
8
详细参数
- 型号：
2SD68
- 制造商：
TOSHIBA
- 制造商全称：
Toshiba Semiconductor
- 功能描述：
SILICON NPN EPITAXIAL(PCT PROCESS)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
TOSHIBA |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
询价 | ||
TOS |
1922+ |
CAN |
3000 |
绝对进口原装现货 |
询价 | ||
SON |
23+ |
TO |
20000 |
正品原装货价格低 |
询价 | ||
T0SHIBA |
24+ |
CAN3 |
5000 |
全新原装正品,现货销售 |
询价 | ||
T0SHIBA |
24+ |
CAN3 |
5000 |
只有原装 |
询价 | ||
T0SHIBA |
24+ |
CAN3 |
8000 |
新到现货，只做全新原装正品 |
询价 | ||
TOSHIBA/东芝 |
2450+ |
CAN |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
T0SHIBA |
25+ |
CAN3 |
8000 |
只有原装 |
询价 | ||
T0SHIBA |
26+ |
CAN3 |
12000 |
原装，正品 |
询价 |
