首页 >2SD313其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
TRANSISTOR(NPN) | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
NPNEPITAXIALPLANARTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
SiliconNPNtransistorinaTO-220PlasticPackage. Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features LowCurrentLowVoltage. Applications Lowfrequencypoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.75W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
TO-220-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowCollector-EmitterSaturationVoltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A ●DCCurrentGainhFE=40~320@IC=1A ●ComplementraytoPNP2SB507 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
NPNEPITAXIALPLANARTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
NPNSiliconEpitaxialPowerTransistor Features: *DCCurrentGainhFE=40-320@IC=1.0A *LowVCE(sat)≤1.0V(MAX)@IC=2.0A,IB=0.2A *ComplememtarytoNPN2SB507 | WEITRON Weitron Technology | WEITRON | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB507 ·Lowcollectorsaturationvoltage APPLICATIONS ·Designedfortheoutputstageof15Wto25WAFpoweramplifier | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPNEPITAXIALPLANARTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC |
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