N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHIGN, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

HIGH SPEED, HIGH CURRENT SWITCHIGN APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

文件：141.15 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.

文件：49.01 Kbytes 页数：4 Pages

UTC

友顺

POWER TRANSISTORS(3A,60V,30W)

3 AMPERE POWER TRANSISTOR 60 VOLT 30 WATTS

文件：115.15 Kbytes 页数：3 Pages

MOSPEC

统懋

NPN Silicon Epitaxial Power Transistor

Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507

文件：201.5 Kbytes 页数：4 Pages

WEITRON

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general-purpose amplifier and switching applications.

文件：194.98 Kbytes 页数：1 Pages

DCCOM

道全

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A ● DC Current Gain hFE=40~320@IC=1A ● Complementray to PNP 2SB507

文件：605.08 Kbytes 页数：2 Pages

JIANGSU

长电科技

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

文件：101.69 Kbytes 页数：3 Pages

SAVANTIC

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER Complement to 2SB507

文件：30.57 Kbytes 页数：1 Pages

WINGS

永盛电子

丝印：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507

文件：1.02553 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE

Planar Rtpe Silicon Transistor For AF POWER Amplifier Use

文件：42.21 Kbytes 页数：1 Pages

SANYO

三洋