丝印：D2583；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

Features Low Vce High DC Current Gain

文件：1.40993 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TO-126 Plastic-Encapsulate Transistors

Features Low Vce High DC Current Gain

文件：1.40993 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current-IC= 5A • Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA • High DC Current Gain- : hFE= 150~600@ IC= 1A APPLICATIONS • Designed for audio frequency amplifier and switching applications.

文件：56.81 Kbytes 页数：2 Pages

ISC

无锡固电

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：56.06 Kbytes 页数：1 Pages

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