首页 >2SD2206(T6PP1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MicroMotorDrive,HammerDriveApplications MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MicroMotorDrive,HammerDriveApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconNPNEpitaxialType(DarlingtonPowerTransistor) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NPNEPITAXIALTYPE(MICROMOTORDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS) MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MicroMotorDrive,HammerDriveApplications MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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