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2SD2012

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2SD2012

TO-220FPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Audiofrequencypoweramplifierapplications ●HighDCcurrentgain ●Lowsaturationvoltage ●Highpowerdissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

2SD2012

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SB1366 ·Lowcollectorsaturationvoltage ·Collectorpowerdissipation:PC=25W(TC=25℃) APPLICATIONS ·Audiofrequencypoweramplifierandgeneralpurposeswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SD2012

NPNSiliconPowerTransistors

Features ·HighDCCurrentGain:hFE(1)=100(Min.) ·LowSaturationVoltage:VCE(sat)=1.0V(Max.) ·HighPowerDissipation:PC=25W(TC=25OC) ·LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·EpoxymeetsUL94V-0flammabilityrating ·

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SD2012

AudioFrequencyPowerAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SD2012

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Complementtotype2SB1366 ·Lowcollectorsaturationvoltage ·Collectorpowerdissipation:PC=25W(TC=25℃) APPLICATIONS ·Audiofrequencypoweramplifierandgeneralpurposeswitchingapplications

SAVANTIC

Savantic, Inc.

2SD2012

SiliconNPNTripleDiffusedType

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SD2012

NPNSILICONPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

2SD2012

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SD2012isasiliconNPNpowertransistorhousedinTO-220Finsulatedpackage.Itisintededforpowerlinearandswitchingapplications. ■HIGHDCCURRENTGAIN ■LOWSATURATIONVOLTAGE ■INSULATEDPACKAGEFOREASYMOUNTING APPLICATIONS ■GENERALPURPOSEPOWERAMPLIFIERS ■G

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

2SD2012

NPNTRIPLEDIFFUSEDTYPE(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS)

AudioFrequencyPowerAmplifierApplications •Lowsaturationvoltage:VCE(sat)=0.4V(typ.)(IC=2A/IB=0.2A) •Highpowerdissipation:PC=25W(Tc=25°C)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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