2SD1782

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighBVCEO ●Complementsthe2SB1198

2SD1782

POWERNPNTRANSISTOR

DESCRIPTION TheUTC2SD1782isanNPNsilicontransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollector-emitterbreakdownvoltage,lowcollector-emittersaturationvoltageandhighDCcurrentgain,etc. FEATURES *Highcollector-emitterbreakdownvoltage *Lowcoll

2SD1782

SOT-23Plastic-EncapsulateTransistors

FEATURES LowVCE(sat) HighBVCEO Complementsthe2SB1198

2SD1782

Low-powerpyroelectricinfraredsensorsignalprocessingchip

ProductOverview HM4002isalow-powerpyroelectricinfraredsensorsignalprocessingchip,whichcanbematchedwithinfraredsensorunitSimpleloadsensingON/OFFanddelaytimingfunctioncontrol;atthesametime,thechipbuilt-inhigh-precisionstableLDO2.6VoutputcanprovideRedpower

2SD1782K

PowerTransistor

Features ●LowVCE(sat).VCE(sat)=0.2V(Typ.)(IC/IB=0.5A/50mA) ●HighVCEO,VCEO=80V.

2SD1782K

PowerTransistor(80V,0.5A)

Features 1)LowVCE(sat). VCE(sat)=0.2V(Typ.) (IC/IB=0.5A/50mA) 2)HighVCEO,VCEO=80V 3)Complementsthe2SB1198K.

2SD1782K

PowerTransistor(80V,0.5A)

2SD1782K

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Highbreakdown,lowVCE(sat),complementsthe2SB1198K. Applications Mediumpoweramplifierapplications.

2SD1782SQ

NPNTransistor