首页 >2SD1620-TD-EIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BipolarTransistor Features •LesspowerdissipationbecauseoflowVCE(sat), permittingmoreflashesoflighttobeemitted •Largecurrentcapacityandhighlyresistanttobreakdown •ExcellentlinearityofhFEintheregionfrom lowcurrenttohighcurrent •Ultrasmallsizesupportshigh-density, | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1.5V,3VStrobeApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
NPNEpitaxialPlanarSiliconTransistor Features ●LesspowerdissipationbecauseoflowVCE(sat), permittingmoreflashesoflighttobeemitted. ●Largecurrentcapacityandhighlyresistanttobreakdown. ●ExcellentlinearityofhFEintheregionfromlow currenttohighcurrent. ●Ultrasmallsizesupportshigh-density,u | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
1.5V,3VStrobeApplications 1.5V,3VStrobeApplications Features •LesspowerdissipationbecauseoflowVCE(sat), permittingmoreflashesoflighttobeemitted. •Largecurrentcapacityandhighlyresistanttobreakdown. •ExcellentlinearityofhFEintheregionfromlow currenttohighcurrent. •Ultrasmall | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO |
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