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2SD1286

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SD1286

NPNSILICONEPITAXIALTRANSISTORMP-3

DESCRIPTION The2SD1286-ZisdesignedforSwitching,especiallyinHybridIntegratedCircuits. FEATURES ●HighhFE:hFE=2000to30000 ●Complementto2SB963-Z

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SD1286-Z

SILICONPOWERTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SD1286-ZisdesignedforSwitching,especiallyinHybrid IntegratedCircuits. FEATURES •HighhFE=2000to30000 •Complementto2SB963-Z

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SD1286-Z

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •WithTO-252(DPAK)packaging •VeryhighDCcurrentgain •Monolithicdarlingtontransistorwithintegrated antiparallelcollector-emitterdiode •Complementtotype2SB963-Z •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATION

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SD1286-Z

NPNSILICONEPITAXIALTRANSISTORMP-3

DESCRIPTION The2SD1286-ZisdesignedforSwitching,especiallyinHybridIntegratedCircuits. FEATURES ●HighhFE:hFE=2000to30000 ●Complementto2SB963-Z

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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