2SD1006-M-HF技术资料参数供应价格科信电子-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SD1006-M-HF	文件：1.24097 Mbytes Page：3 Pages	NPN Transistors 文件：1.24097 Mbytes 页数：3 Pages	KEXIN 科信电子	KEXIN
2SD1006	文件：52.01 Kbytes Page：1 Pages	NPN Silicon Epitaxial Transistor Features ● High collector to emitter voltage: VCEO > 100V. 文件：52.01 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN
2SD1006	文件：223.61 Kbytes Page：4 Pages	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● World Standard Miniature Package : SOT-89 ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) 文件：223.61 Kbytes 页数：4 Pages	NEC 瑞萨	NEC
2SD1006	文件：1.72319 Mbytes Page：6 Pages	Old Company Name in Catalogs and Other Documents DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl 文件：1.72319 Mbytes 页数：6 Pages	RENESAS 瑞萨	RENESAS

更多2SD1006-M-HF供应商更新时间2026-2-9 18:50:00