2SC5912

Silicon NPN triple diffusion mesa type

SiliconNPNtriplediffusionmesatype HorizontaldeflectionoutputforTV ■Features •Highbreakdownvoltage:VCBO≥1500V •Widesafeoperationarea •Built-indumperdiode

2SC5913

Silicon NPN triple diffusion mesa type

SiliconNPNtriplediffusionmesatype HorizontaldeflectionoutputforTV,CRTMonitor ■Features •Highbreakdownvoltage:VCBO≥1500V •Widesafeoperationarea •Built-indumperdiode

2SC5915

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

High-CurrentSwitchingApplications Features •AdoptionofMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Surfacemounttype. Applications •Relaydrivers,lampdrivers,motordrivers,inverters.

2SC5915

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

2SC5916

Medium power transistor (30V, 2A)

Features 1)Highspeedswitching.(Tf:Typ.:20nsatIC=2A) 2)Lowsaturationvoltage,typically (Typ.:200mVatIC=1.0A,IB=0.1A) 3)Strongdischargepowerforinductiveloadand capacitanceload. 4)Complementsthe2SA2113 Applications Lowfrequencyamplifier

2SC5914

Silicon NPN triple diffusion mesa type

2SC5916TLQ

Package：SC-96；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 2A TSMT3

Rohm Semiconductor

2SC5916TLR

包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 2A TSMT3

Rohm Semiconductor