2SC5890

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features •Highgainbandwidthproduct:fT=7.8GHztyp. •Highpowergainandlownoisefigure;PG=12dBtyp.,NF=1.0dBtyp.atf=900MHz •Highcollectorpowerdissipation:Pc=700mWwhenusingaluminaceramicboard(25x60x0.7mm) •HighwithstandingtoESDofcollectortoemit

2SC5890

High Gain Bandwidth Product

DESCRIPTION •HighGainBandwidthProductfT=7.8GHzTYP. •Highpowergainandlownoisefigure;PG=12dBTYP.,NF=1.0dBtyp.@f=900MHz APPLICATIONS •DesignedforuseinUHF~VHFwidebandamplifier.

2SC5890

Silicon NPN RF Transistor

DESCRIPTION •HighGainBandwidthProductfT=7.8GHzTYP. •Highpowergainandlownoisefigure;PG=12dBTYP.,NF=1.0dBtyp.@f=900MHz APPLICATIONS •DesignedforuseinUHF~VHFwidebandamplifier.

2SC5894

Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

Features •Highgainbandwidthproduct fT=20GHztyp. •Highpowergainandlownoisefigure; PG=17.5dBtyp.,NF=1.8dBtyp.atf=1.8GHz

2SC5895

Silicon NPN epitaxial planar type

■Features •High-speedswitching(tstg:storagetime/tf:falltimeisshort) •Lowcollector-emittersaturationvoltageVCE(sat) •SuperiorforwardcurrenttransferratiohFElinearity •TO-220Dbuilt-in:Excellentpackagewithwithstandvoltage5kV guaranteed

2SC5899

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-DefinitionCRTDisplay HorizontalDeflectionOutputApplications Features •Highspeed. •Highbreakdownvoltage(VCBO=1700V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

2SC5895

Silicon NPN Power Transistors

2SC5895

Silicon NPN Power Transistors

2SC5895

Silicon NPN Power Transistors

2SC5895

Silicon NPN Power Transistors

2SC5895_15

Silicon NPN Power Transistors

2SC5895_2015

Silicon NPN Power Transistors

2SC5896

Silicon NPN epitaxial planar type