Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：30.07 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3.0V(Max) @IC= 10.8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：262.13 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior fo

文件：78.34 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN RF Transistor

文件：82.56 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Gain Bandwidth Product

文件：257.29 Kbytes 页数：10 Pages

ISC

无锡固电

Silicon NPN Epitaxial VHF/UHF wide band amplifier

• High gain bandwidth product\n  fT = 9 GHz typ.\n• High power gain and low noise figure ;\n  PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz ;

Renesas

瑞萨

Silicon NPN Epitaxial UHF / VHF wide band amplifier

• High gain bandwidth product\n   fT= 10.8 GHz typ.\n• High power gain and low noise figure ;\n   PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz ;

Renesas

瑞萨

Transistors>Amplifiers/Bipolar

Renesas

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