Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

文件：90.98 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

文件：137 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

文件：137 Kbytes 页数：13 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT= 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

文件：138.18 Kbytes 页数：11 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT = 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

文件：91.09 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT= 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

文件：138.18 Kbytes 页数：11 Pages

RENESAS

瑞萨

140V / 10A, AF70W Output Applications

140V / 10A, AF70W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

文件：34.08 Kbytes 页数：4 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

文件：43.78 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：29.86 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：41.03 Kbytes 页数：4 Pages

SANYO

三洋