2SC5706D资料使用说明书批发供应喜可士-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SC5706D	文件：497.24 Kbytes Page：3 Pages	NPN Silicon General Purpose Transistor FEATURES • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation 文件：497.24 Kbytes 页数：3 Pages	SECOS 喜可士	SECOS
2SC5706-E	文件：424.78 Kbytes Page：10 Pages	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel 文件：424.78 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
2SC5706-E	文件：424.78 Kbytes Page：10 Pages	Bipolar Transistor 文件：424.78 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
2SC5706-H	文件：424.78 Kbytes Page：10 Pages	Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, rel 文件：424.78 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI

更多2SC5706D供应商更新时间2025-10-11 14:20:00