首页 >2SC5703(TE85L,F)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-SpeedSwitchingApplicationsDC-DCConverterApplicationsStrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconNPNEpitaxialTypeHigh-SpeedSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBATransistorSiliconNPNEpitaxialType High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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