首页 >2SC5551F-TD-E>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-FrequencyMedium-OutputAmplifierApplications High-FrequencyMedium-OutputAmplifierApplications Features •HighfT:(fT=3.5GHztyp). •Largecurrent:(IC=300mA). •Largeallowablecollectordissipation(1.3Wmax). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
High-FrequencyMedium-OutputAmplifierApplications NPNEpitaxialPlanarSiliconTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax) | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
High-FrequencyMedium-OutputAmplifierApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
RFTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RFTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
High-FrequencyMedium-OutputAmplifierApplications NPNEpitaxialPlanarSiliconTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax) | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
RFTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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