首页 >2SC5200N其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNTripleDiffusedTransistor | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
SiliconNPNTripleDiffusedTransistor | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
SiliconNPNTripleDiffusedTransistor | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
poweramplifierapplications POWERAMPLIFIERAPPLICATIONS •Complementaryto2SA1943 •Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NPNEpitaxialSiliconTransistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNEpitaxialSiliconTransistor 1.HighCurrentCapability:IC=17A. 2.HighPowerDissipation:150watts. 3.HighFrequency:30MHz. 4.HighVoltage:VCEO=250V 5.WideS.O.Aforreliableoperation. 6.ExcellentGainLinearityforlowTHD. 7.Complementto2SA1943/FJL4215. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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