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2SC4881

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) ·HighSwitchingSpeed ·LowCollectorSaturationVoltage-:VCE(sat)=0.4V(Max)@(IC=2.5A,IB=125mA) APPLICATIONS ·Designedforhighcurrentswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2SC4881

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2SC4881

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) ·HighSwitchingSpeed ·LowCollectorSaturationVoltage-:VCE(sat)=0.4V(Max)@(IC=2.5A,IB=125mA) APPLICATIONS ·Designedforhighcurrentswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SC4881

High-CurrentSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SC4881

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Lowsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications

SAVANTIC

Savantic, Inc.

2SC4881

NPNEPITAXIALTYPE(HIGHCURRENTSWITCHINGAPPLICATIONS)

High-CurrentSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=0.8µs(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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