首页 >2SC4881其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) ·HighSwitchingSpeed ·LowCollectorSaturationVoltage-:VCE(sat)=0.4V(Max)@(IC=2.5A,IB=125mA) APPLICATIONS ·Designedforhighcurrentswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) ·HighSwitchingSpeed ·LowCollectorSaturationVoltage-:VCE(sat)=0.4V(Max)@(IC=2.5A,IB=125mA) APPLICATIONS ·Designedforhighcurrentswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
High-CurrentSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fpackage ·Lowsaturationvoltage ·Highspeedswitchingtime APPLICATIONS ·Highcurrentswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPNEPITAXIALTYPE(HIGHCURRENTSWITCHINGAPPLICATIONS) High-CurrentSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.4V(max) •High-speedswitching:tstg=0.8µs(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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