SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose

文件：69.41 Kbytes 页数：1 Pages

WINGS

永盛电子

SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

Wing Shing Computer

永盛电子

Silicon NPN Power Transistors

文件：121.58 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) • Complement to Type 2SA1757 APPLICATIONS • Designed for high speed and power switching applications

文件：257.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Wide area of safe operation APPLICATIONS • For high speed power switching and DC-DC converter applications

文件：119.95 Kbytes 页数：3 Pages

SAVANTIC