Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 0.3A SC70

Toshiba Semiconductor and Storage

For Muting and Switching Applications

文件：281.26 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Features ● High emitter-base voltage: VEBO = 25 V (min). ● High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). ● Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). ● High DC current gain: hFE = 200 1200. ● Small package.

文件：51.51 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

文件：507.9 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

文件：177.55 Kbytes 页数：4 Pages

TOSHIBA

东芝