首页 >2SC4135-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
High-VoltageSwitchingApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •Complementaryto2SA1593 APPLICATIONS •Powersupplies,re | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
High-VoltageSwitchingApplications Features ●Highbreakdownvoltageandlargecurrentcapacity. ●Fastswitchingspeed. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses. •Highbreakdownvoltageandlargecurrentcapacity. •Fastswitchingspeed. •Smallandslimpackagepermitting2SA1593/2SC4135-appliedsetstobemademorecompact. Applications •Powersupplies | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
BipolarTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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