isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- ： VCBO= 1500V (Min) • High Switching Speed • Low Saturation Voltage • Built-in Damper Diode APPLICATIONS • Designed for horizontal deflection output applications

文件：194.4 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件：248.71 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • Built-in damper diode • High voltage ,high speed APPLICATIONS • Horizontal deflection output for high resolution display

文件：95.76 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • Built-in damper diode • High voltage ,high speed APPLICATIONS • Horizontal deflection output for high resolution display

文件：247.11 Kbytes 页数：3 Pages

SAVANTIC