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2SC3669

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

UTCUnisonic Technologies

友顺友顺科技股份有限公司

2SC3669

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)PowerAmplifierApplicationsPowerSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SC3669

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONS ​​​​​​​POWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:TSTG=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

2SC3669

NPNEPITAXIALTYPE(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=1.0µs(typ.) •Complementaryto2SA1429

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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