首页 >2SC3623-K(A)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPNSILICONTRANSISTOR FEATURES •HighhFE: hFE=1000to3200@VCE=5.0V,IC=1.0mA •LowVCE(sat): VCE(sat)=0.07VTYP.@IC/IB=50mA/5.0mA •HighVEBO: VEBO:12V(2SC3623) VEBO:15V(2SC3623A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONTRANSISTORS NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDSWITCHING FEATURES •HighhFE: hFE=1000to3200@VCE=5.0V,IC=1.0mA •LowVCE(sat): VCE(sat)=0.07VTYP.@IC/IB=50mA/5.0mA •HighVEBO: VEBO:12V(2SC3623) VEBO:15V(2SC3623A) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
2SC3623A SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
2SC3623A SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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