NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

文件：267.19 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：773 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • High DC current gain • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • This transistor is ideal for audio frequency amplifier and switching especially in hybrid i

文件：249.18 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon Epitaxia

Features ● Low VCE(sat). ● Fast switching speed. ● High DC current gain.

文件：40.94 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：236.01 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose

文件：174.48 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)

Complement to type 2SA1386/A Application : Audio and General Purpose External Dimensions MT-100(TO3P)

文件：24.51 Kbytes 页数：1 Pages

SANKEN

三垦

isc Silicon NPN Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications

文件：254.03 Kbytes 页数：2 Pages

ISC

无锡固电

POWER TRANSISTORS(15A,130W)

HIGH-POWER NPN SILICON POWER TRANSISTORS 15 AMPERE SILICON POWER TRANSISTOR 160 -180 VOLTS 130 WATTS

文件：138.61 Kbytes 页数：3 Pages

MOSPEC

统懋