Silicon NPN Epitaxial Planar

Application FM RF/IF amplifier

文件：24.33 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

日立日立公司

High-hFE, Low-Frequency General-Purpose Amp Applications??????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Adoption of FBET process. • High DC current gain (hFE=500 to 2000). • High breakdown voltage (VCEO≥100V). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High VEBO (VEBO≥15V). • Small Cob (Cob=1.8pF t

文件：76.09 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the printed circu

文件：98.46 Kbytes 页数：4 Pages

PANASONIC

松下

NPN Silicon Triple Diffused Transistor

Features ● High-speed switching ● High collector-base voltage (Emitter open) VCBO ● Satisfactory linearity of forward current transfer ratio hFE

文件：40.58 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the printed circu

文件：98.46 Kbytes 页数：4 Pages

PANASONIC

松下

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.2V(Max)@ (IC= 5A) APPLICATIONS · Designed for use in general purpose power amplifier and switching applications

文件：286.62 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Transistor

HITACHI

日立

NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications

ONSEMI

安森美半导体

6A; 30W; V(ceo): 400V; NPN transistor. For switching regulation

Toshiba

东芝