首页 >2SC3356TIB>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
High-FrequencyAmplifierTransistorNPNSilicon FEATURES *LownoiseamplifieratVHF,UHFandCATVband. *LowNoiseandHighGain *HighPowerGain | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
NPNSiliconPlastic-EncapsulateTransistor FEATURES •PowerDissipation •RoHSCompliantProduct | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
HIGHFREQUENCYLOWNOISEAMPLIFIER | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
HIGHFREQUENCYLOWNOISEAMPLIFIER HIGHFREQUENCYLOWNOISEAMPLIFIER ■DESCRIPTION TheUTC2SC3356isdesignedforsuchapplicationsas:DC/DCconverters,supplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.r | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold *Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz *Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA,f=1GHz | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SOT-23 High-FrequencyAmplifierTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. | GSME | ||
NPNSiliconRFTransistor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
HIGHFREQUENCYLOWNOISEAMPLIFIER | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | MAKOSEMI MAKO SEMICONDUCTOR CO.,LIMITED | MAKOSEMI | ||
NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold FEATURES •Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz •Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA, | CEL California Eastern Laboratories | CEL | ||
LowNoiseandHighGain DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0 | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN | ||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lownoiseandhighpowergain. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
MICROWAVELOWNOISEAMPLIFIER(NPNSILICONEPITAXIALTRANSISTOR) DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0GHz •High | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
iscSiliconNPNRFTransistor DESCRIPTION ·LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ·HighPowerGain MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz APPLICATIONS ·DesignedforlownoiseamplifieratVHF,UHFandCATVband. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNSiliconEpitaxialTransistor Features ●Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
NPNTransistors Features ●Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2021+ |
SOT |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
NEC |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
23+ |
SOT-23 |
2500 |
专业优势供应 |
询价 | ||
RENSEAS |
2023+ |
SOT23(R25) |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
2023 |
SOT23-3 |
10000 |
全新原装 |
询价 | |||
BILIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ON |
09+ |
SC-70SOT-323 |
15000 |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
SOT-323 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
SK |
21+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SK |
22+ |
SOT-23 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 |
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