丝印：R26；Package：SOT23-3L；NPN Transistors

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：485.28 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：R26；Package：SOT23；NPN Transistors

Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：1.21418 Mbytes 页数：4 Pages

EVVOSEMI

翊欧

NPN Transistors

文件：1.31899 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.41498 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.309 Mbytes 页数：3 Pages

KEXIN

科信电子