首页 >2SC3326-A,LF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNtransistorinaSOT-23PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconNPNEpitaxialType(PCTprocess)ForMutingandSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS) ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconNPNEpitaxial Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1Ω(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=200~1200. ●Smallpackage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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