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2SC3265

SOT-23Plastic-EncapsulateTransistors

FEATURES *HighDCcurrentgain *ComplementarytoKTA1298

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

2SC3265

LowFrequencyPowerAmplifierApplicationsPowerSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SC3265

NPNTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SC3265

NPNEPITAXIALSILICONTRANSISTOR

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

2SC3265

LowFrequencyPowerAmplifierApplicationsPowerSwitchingApplications

LowFrequencyPowerAmplifierApplications PowerSwitchingApplications HighDCcurrentgain:hFE(1)=100~320 Lowsaturationvoltage:VCE(sat)=0.4V(max)(IC=500mA,IB=20mA) Complementaryto2SA1298

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SC3265

LowFrequencyPowerAmplifierApplicationsPowerSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SC3265

SiliconNPNEpitaxial

Features ●HighDCcurrentgain:hFE(1)=100320. ●Lowsaturationvoltage:VCE(sat)=0.4V(max)(IC=500mA,IB=20mA).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SC3265

NPNEPITAXIALTYPE(LOWFREQUENCYPOWERAMPLIFIER,POWERSWITCHINGAPPLICATIONS)

LowFrequencyPowerAmplifierApplications PowerSwitchingApplications HighDCcurrentgain:hFE(1)=100~320 Lowsaturationvoltage:VCE(sat)=0.4V(max)(IC=500mA,IB=20mA) Complementaryto2SA1298

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

2SC3265-O

NPNTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SC3265-O

NPNGeneralPurposeAmplifier

Features ·LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·Powerswitchingapplication ·Complementaryto2SA1298 ·Lowfrequencypoweramplifierapplication ·EpoxymeetsUL94V-0flammabilityrating ·MoisureSensitivityL

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

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