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2SC3265-Y-TP

包装:散装 封装/外壳:TO-236-3,SC-59,SOT-23-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 30V 0.8A SOT23

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SC3265

SOT-23Plastic-EncapsulateTransistors

FEATURES *HighDCcurrentgain *ComplementarytoKTA1298

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

2SC3265

LowFrequencyPowerAmplifierApplicationsPowerSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC3265

NPNTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SC3265

NPNEPITAXIALSILICONTRANSISTOR

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

2SC3265

LowFrequencyPowerAmplifierApplicationsPowerSwitchingApplications

LowFrequencyPowerAmplifierApplications PowerSwitchingApplications HighDCcurrentgain:hFE(1)=100~320 Lowsaturationvoltage:VCE(sat)=0.4V(max)(IC=500mA,IB=20mA) Complementaryto2SA1298

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC3265

LowFrequencyPowerAmplifierApplicationsPowerSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC3265

SiliconNPNEpitaxial

Features ●HighDCcurrentgain:hFE(1)=100320. ●Lowsaturationvoltage:VCE(sat)=0.4V(max)(IC=500mA,IB=20mA).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SC3265

NPNEPITAXIALTYPE(LOWFREQUENCYPOWERAMPLIFIER,POWERSWITCHINGAPPLICATIONS)

LowFrequencyPowerAmplifierApplications PowerSwitchingApplications HighDCcurrentgain:hFE(1)=100~320 Lowsaturationvoltage:VCE(sat)=0.4V(max)(IC=500mA,IB=20mA) Complementaryto2SA1298

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC3265-O

NPNTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SC3265-O

NPNGeneralPurposeAmplifier

Features ·LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·Powerswitchingapplication ·Complementaryto2SA1298 ·Lowfrequencypoweramplifierapplication ·EpoxymeetsUL94V-0flammabilityrating ·MoisureSensitivityL

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SC3265-O

NPNGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SC3265-O

NPNTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SC3265Y

LowFrequencyPowerAmplifierApplicationsPowerSwitchingApplications

LowFrequencyPowerAmplifierApplications PowerSwitchingApplications HighDCcurrentgain:hFE(1)=100~320 Lowsaturationvoltage:VCE(sat)=0.4V(max)(IC=500mA,IB=20mA) Complementaryto2SA1298

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC3265-Y

NPNTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SC3265-Y

NPNGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SC3265-Y

NPNTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2SC3265-Y

NPNGeneralPurposeAmplifier

Features ·LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ·Powerswitchingapplication ·Complementaryto2SA1298 ·Lowfrequencypoweramplifierapplication ·EpoxymeetsUL94V-0flammabilityrating ·MoisureSensitivityL

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

产品属性

  • 产品编号:

    2SC3265-Y-TP

  • 制造商:

    Micro Commercial Co

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 20mA,500mA

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    160 @ 100mA,1V

  • 频率 - 跃迁:

    120MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23

  • 描述:

    TRANS NPN 30V 0.8A SOT23

供应商型号品牌批号封装库存备注价格
Micro Commercial Co
24+
TO-236-3,SC-59,SOT-23-3
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
TOSHIBA/东芝
22+
SOT23
50000
原装正品.假一罚十
询价
TOSHIBA/东芝
23+
SOT23-5
90000
只做原厂渠道价格优势可提供技术支持
询价
TOSHIBA/东芝
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
TOSHIBA/东芝
23+
SOT-23
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
TOSHIBA/东芝
22+
24000
询价拨打15919799957全天在线
询价
TOSHIBA/东芝
2021+
SOT-23
1000
13632880263
询价
TOSHIBA/东芝
22+
SOT-23
30345
原装现货假一赔十
询价
TOSHIBA/东芝
22+
SOT-23
354000
询价
TOSHIBA/东芝
23+
12000
询价
更多2SC3265-Y-TP供应商 更新时间2024-9-24 9:57:00